COL ICSD Collection Code 15325 DATE Recorded Jan 1, 1980; updated May 3, 1988 NAME Silicon carbide (1/1) FORM Si C = C Si TITL Refinement of the crystal structure of Si C type 6H REF Acta Crystallographica (1,1948-23,1967) ACCRA 23 (1967) 610-617 AUT Gomes de Mesquita A H CELL a=3.081 b=3.081 c=15.117 à=90.0 á=90.0 ç=120.0 V=124.2 Z=6 SGR P 63 m c (186) - hexagonal CLAS 6mm (Hermann-Mauguin) - C6v (Schoenflies) PRS hP12 ANX NO PARM Atom__No OxStat Wyck ---X--- ---Y--- ---Z--- -SOF- Si 1 0.000 2a 0. 0. 0. Si 2 0.000 2b 2/3 1/3 1/6 Si 3 0.000 2b 1/3 2/3 1/3 C 1 0.000 2a 0. 0. 1/8 C 2 0.000 2b 2/3 1/3 0.29188 C 3 0.000 2b 1/3 2/3 0.4585 WYCK b4 a2 ÿ TF Atom á(1,1) á(2,2) á(3,3) á(1,2) á(1,3) á(2,3) Si 1 0.0062 0.0062 0.0002 0.0031 0.0000 0.0000 Si 2 0.0062 0.0062 0.0002 0.0031 0.0000 0.0000 Si 3 0.0062 0.0062 0.0002 0.0031 0.0000 0.0000 C 1 0.0111 0.0111 0.0003 0.0055 0.0000 0.0000 C 2 0.0111 0.0111 0.0003 0.0055 0.0000 0.0000 C 3 0.0111 0.0111 0.0003 0.0055 0.0000 0.0000 TEST No R value given in the paper. (Code 51) COL ICSD Collection Code 18136 DATE Recorded Jan 1, 1980 NAME SILICON CARBIDE (1/1) FORM Si C = C Si TITL The structure of a silicone carbide polytype 24r REF Acta Crystallographica (1,1948-23,1967) ACCRA 18 (1965) 128 AUT Gomes de Mesquita A H CELL a=3.082 b=3.082 c=60.490 à=90.0 á=90.0 ç=120.0 V=497.6 Z=24 SGR R 3 m H (160) - trigonal CLAS 3m (Hermann-Mauguin) - C3v (Schoenflies) PRS hR48 ANX AX PARM Atom__No OxStat Wyck ---X--- ---Y--- ---Z--- -SOF- Si 1 4.000 3a 0. 0. 0. Si 2 4.000 3a 0. 0. 1/8 Si 3 4.000 3a 0. 0. 1/4 Si 4 4.000 3a 0. 0. 0.417 Si 5 4.000 3a 0. 0. 1/2 Si 6 4.000 3a 0. 0. 5/8 Si 7 4.000 3a 0. 0. 0.708 Si 8 4.000 3a 0. 0. 7/8 C 1 -4.000 3a 0. 0. 0.031 C 2 -4.000 3a 0. 0. 0.156 C 3 -4.000 3a 0. 0. 0.281 C 4 -4.000 3a 0. 0. 0.448 C 5 -4.000 3a 0. 0. 0.531 C 6 -4.000 3a 0. 0. 0.656 C 7 -4.000 3a 0. 0. 0.74 C 8 -4.000 3a 0. 0. 0.906 WYCK a16 REM POL 24R RVAL 0.110 TEST At least one temperature factor missing in the paper. (Code 53) COL ICSD Collection Code 23887 DATE Recorded Jan 1, 1980 NAME Silicon carbide FORM Si C = C Si TITL A New Polytype of Silicon Carbide, 57R. Its Structure and Growth REF Acta Crystallographica (1,1948-23,1967) ACCRA 15 (1962) 383-387 AUT Krishna P, VermaÿAÿR CELL a=3.078 b=3.078 c=143.526 à=90.0 á=90.0 ç=120.0 V=1177.6 Z=57 SGR R 3 m H (160) - trigonal CLAS 3m (Hermann-Mauguin) - C3v (Schoenflies) PRS hR114 ANX NO PARM Atom__No OxStat Wyck ---X--- ---Y--- ---Z--- -SOF- Si 1 0.000 3a 0. 0. 0. Si 2 0.000 3a 0. 0. 0.0702 Si 3 0.000 3a 0. 0. 0.1053 Si 4 0.000 3a 0. 0. 0.1754 Si 5 0.000 3a 0. 0. 0.2105 Si 6 0.000 3a 0. 0. 0.2807 Si 7 0.000 3a 0. 0. 0.3158 Si 8 0.000 3a 0. 0. 0.3684 Si 9 0.000 3a 0. 0. 0.4211 Si 10 0.000 3a 0. 0. 0.4737 Si 11 0.000 3a 0. 0. 0.5263 Si 12 0.000 3a 0. 0. 0.5789 Si 13 0.000 3a 0. 0. 0.6316 Si 14 0.000 3a 0. 0. 0.6842 Si 15 0.000 3a 0. 0. 0.7193 Si 16 0.000 3a 0. 0. 0.7895 Si 17 0.000 3a 0. 0. 0.8246 Si 18 0.000 3a 0. 0. 0.8947 Si 19 0.000 3a 0. 0. 0.9298 C 1 0.000 3a 0. 0. 0.0132 C 2 0.000 3a 0. 0. 0.0833 C 3 0.000 3a 0. 0. 0.1184 C 4 0.000 3a 0. 0. 0.1886 C 5 0.000 3a 0. 0. 0.2237 C 6 0.000 3a 0. 0. 0.2939 C 7 0.000 3a 0. 0. 0.3289 C 8 0.000 3a 0. 0. 0.3816 C 9 0.000 3a 0. 0. 0.4342 C 10 0.000 3a 0. 0. 0.4868 C 11 0.000 3a 0. 0. 0.5395 C 12 0.000 3a 0. 0. 0.5921 C 13 0.000 3a 0. 0. 0.6447 C 14 0.000 3a 0. 0. 0.6974 C 15 0.000 3a 0. 0. 0.7325 C 16 0.000 3a 0. 0. 0.8026 C 17 0.000 3a 0. 0. 0.8377 C 18 0.000 3a 0. 0. 0.9079 C 19 0.000 3a 0. 0. 0.943 WYCK a38 REM POL 57R TEST At least one temperature factor missing in the paper. (Code 53) TEST The lattice paramters are unusual but agree with the paper. (Code 55) TEST No R value given in the paper. (Code 51) COL ICSD Collection Code 24168 DATE Recorded Jan 1, 1980 NAME Silicon carbide - alpha I FORM Si C = C Si TITL Morphological and Structural Crystallography and Optical Properties of Silicon Carbide (Si C) REF American Mineralogist AMMIA 29 (1944) 327-362 REF Zeitschrift fuer Kristallographie, Kristallgeometrie, Kristallphysik, Kristallchemie (-144,1977) ZEKGA 61 (1925) 515-531 AUT Thibault N W CELL a=3.073 b=3.073 c=37.700 à=90.0 á=90.0 ç=120.0 V=308.3 Z=15 SGR R 3 m H (160) - trigonal CLAS 3m (Hermann-Mauguin) - C3v (Schoenflies) PRS hR30 ANX AX PARM Atom__No OxStat Wyck ---X--- ---Y--- ---Z--- -SOF- Si 1 4.000 3a 0. 0. 0.05 Si 2 4.000 3a 0. 0. 0.183 Si 3 4.000 3a 0. 0. 0.45 Si 4 4.000 3a 0. 0. 0.65 Si 5 4.000 3a 0. 0. 0.917 C 1 -4.000 3a 0. 0. 0. C 2 -4.000 3a 0. 0. 0.133 C 3 -4.000 3a 0. 0. 0.4 C 4 -4.000 3a 0. 0. 0.6 C 5 -4.000 3a 0. 0. 0.867 WYCK a10 TEST No R value given in the paper. (Code 51) TEST At least one temperature factor missing in the paper. (Code 53) COL ICSD Collection Code 24169 DATE Recorded Jan 1, 1980 NAME Silicon carbide - alpha II FORM Si C = C Si TITL Morphological and Structural Crystallography and Optical Properties of Silicon Carbide (Si C) REF American Mineralogist AMMIA 29 (1944) 327-362 REF Zeitschrift fuer Kristallographie, Kristallgeometrie, Kristallphysik, Kristallchemie (-144,1977) ZEKGA 62 (1925) 201-217 AUT Thibault N W CELL a=3.073 b=3.073 c=15.079 à=90.0 á=90.0 ç=120.0 V=123.3 D=3.22 Z=6 SGR P 63 m c (186) - hexagonal CLAS 6mm (Hermann-Mauguin) - C6v (Schoenflies) PRS hP12 ANX AX PARM Atom__No OxStat Wyck ---X--- ---Y--- ---Z--- -SOF- Si 1 4.000 2a 0. 0. 1/8 Si 2 4.000 2b 1/3 2/3 0.292 Si 3 4.000 2b 1/3 2/3 0.958 C 1 -4.000 2a 0. 0. 0. C 2 -4.000 2b 1/3 2/3 1/6 C 3 -4.000 2b 1/3 2/3 5/6 WYCK b4 a2 TEST No R value given in the paper. (Code 51) TEST At least one temperature factor missing in the paper. (Code 53) COL ICSD Collection Code 24170 DATE Recorded Jan 1, 1980 NAME Silicon carbide - alpha III FORM Si C = C Si TITL Morphological and Structural Crystallography and Optical Properties of Silicon Carbide (Si C) REF American Mineralogist AMMIA 29 (1944) 327-362 REF Zeitschrift fuer Kristallographie, Kristallgeometrie, Kristallphysik, Kristallchemie (-144,1977) ZEKGA 63 (1926) 1-18 AUT Thibault N W CELL a=3.073 b=3.073 c=10.053 à=90.0 á=90.0 ç=120.0 V=82.2 Z=4 SGR P 63 m c (186) - hexagonal CLAS 6mm (Hermann-Mauguin) - C6v (Schoenflies) PRS hP8 ANX AX PARM Atom__No OxStat Wyck ---X--- ---Y--- ---Z--- -SOF- Si 1 4.000 2a 0. 0. 0.188 Si 2 4.000 2b 1/3 -1/3 0.438 C 1 -4.000 2a 0. 0. 0. C 2 -4.000 2b 1/3 -1/3 1/4 WYCK b2 a2 TEST No R value given in the paper. (Code 51) TEST At least one temperature factor missing in the paper. (Code 53) COL ICSD Collection Code 24171 DATE Recorded Jan 1, 1980 NAME Silicon carbide - beta FORM Si C = C Si TITL Morphological and Structural Crystallography and Optical Properties of Silicon Carbide (Si C) REF American Mineralogist AMMIA 29 (1944) 327-362 AUT Thibault N W CELL a=4.349 b=4.349 c=4.349 à=90.0 á=90.0 ç=90.0 V=82.3 Z=4 SGR F -4 3 m (216) - cubic CLAS -43m (Hermann-Mauguin) - Td (Schoenflies) PRS cF8 ANX AX PARM Atom__No OxStat Wyck ---X--- ---Y--- ---Z--- -SOF- Si 1 4.000 4a 0. 0. 0. C 1 -4.000 4c 1/4 1/4 1/4 WYCK c a TEST No R value given in the paper. (Code 51) TEST At least one temperature factor missing in the paper. (Code 53) COL ICSD Collection Code 24217 DATE Recorded Jan 1, 1980; updated Jul 25, 1988 NAME Silicon carbide MINR Carborundum - artificial FORM Si C = C Si TITL Zur Kristallstruktur des kubischen Karborunds REF Zeitschrift fuer Kristallographie, Kristallgeometrie, Kristallphysik, Kristallchemie (-144,1977) ZEKGA 76 (1931) 148-149 AUT Braekken H CELL a=4.348 b=4.348 c=4.348 à=90.0 á=90.0 ç=90.0 V=82.2 Z=4 SGR F -4 3 m (216) - cubic CLAS -43m (Hermann-Mauguin) - Td (Schoenflies) PRS cF8 ANX AX PARM Atom__No OxStat Wyck ---X--- ---Y--- ---Z--- -SOF- Si 1 4.000 4a 0. 0. 0. C 1 -4.000 4c 1/4 1/4 1/4 WYCK c a TEST No R value given in the paper. (Code 51) TEST At least one temperature factor missing in the paper. (Code 53) COL ICSD Collection Code 24261 DATE Recorded Jan 1, 1980 NAME Silicon carbide FORM Si C = C Si TITL Synthesis and crystallography of the Wurtzite form of silicon carbide REF Zeitschrift fuer Kristallographie, Kristallgeometrie, Kristallphysik, Kristallchemie (-144,1977) ZEKGA 111 (1959) 350-361 AUT Adamsky R F, MerzÿKÿM CELL a=3.076 b=3.076 c=10.096 à=90.0 á=90.0 ç=120.0 V=82.7 Z=4 SGR P 63 m c (186) - hexagonal CLAS 6mm (Hermann-Mauguin) - C6v (Schoenflies) PRS hP8 ANX AX PARM Atom__No OxStat Wyck ---X--- ---Y--- ---Z--- -SOF- Si 1 4.000 2a 0. 0. 0. Si 2 4.000 2b 2/3 1/3 1/2 C 1 -4.000 2a 0. 0. 0.1875 C 2 -4.000 2b 2/3 1/3 0.6875 WYCK b2 a2 REM POL 2H RVAL 0.073 TEST At least one temperature factor missing in the paper. (Code 53) COL ICSD Collection Code 24630 DATE Recorded Jan 1, 1980 NAME Silicon carbide FORM Si C = C Si TITL Developments in Silicon Carbide Research REF Acta Crystallographica (1,1948-23,1967) ACCRA 5 (1952) 215-224 AUT Ramsdell L S, KohnÿJÿA CELL a=3.067 b=3.067 c=20.067 à=90.0 á=90.0 ç=120.0 V=163.5 Z=8 SGR P 63 m c (186) - hexagonal CLAS 6mm (Hermann-Mauguin) - C6v (Schoenflies) PRS hP16 ANX AX PARM Atom__No OxStat Wyck ---X--- ---Y--- ---Z--- -SOF- Si 1 4.000 2a 0. 0. 0. Si 2 4.000 2b 1/3 2/3 5/8 Si 3 4.000 2b 1/3 2/3 1/4 Si 4 4.000 2b 1/3 2/3 7/8 C 1 -4.000 2a 0. 0. 0.094 C 2 -4.000 2b 1/3 2/3 0.344 C 3 -4.000 2b 1/3 2/3 0.719 C 4 -4.000 2b 1/3 2/3 0.969 WYCK b6 a2 REM POL 8H TEST No R value given in the paper. (Code 51) TEST At least one temperature factor missing in the paper. (Code 53) COL ICSD Collection Code 24631 DATE Recorded Jan 1, 1980 NAME Silicon carbide FORM Si C = C Si TITL Developments in Silicon Carbide Research REF Acta Crystallographica (1,1948-23,1967) ACCRA 5 (1952) 215-224 AUT Ramsdell L S, KohnÿJÿA CELL a=3.067 b=3.067 c=67.725 à=90.0 á=90.0 ç=120.0 V=551.7 Z=27 SGR R 3 m H (160) - trigonal CLAS 3m (Hermann-Mauguin) - C3v (Schoenflies) PRS hR54 ANX AX PARM Atom__No OxStat Wyck ---X--- ---Y--- ---Z--- -SOF- Si 1 4.000 3a 0. 0. 0. Si 2 4.000 3a 0. 0. 0.148 Si 3 4.000 3a 0. 0. 0.296 Si 4 4.000 3a 0. 0. 0.37 Si 5 4.000 3a 0. 0. 0.444 Si 6 4.000 3a 0. 0. 0.519 Si 7 4.000 3a 0. 0. 0.593 Si 8 4.000 3a 0. 0. 0.741 Si 9 4.000 3a 0. 0. 0.889 C 1 -4.000 3a 0. 0. 0.028 C 2 -4.000 3a 0. 0. 0.176 C 3 -4.000 3a 0. 0. 0.324 C 4 -4.000 3a 0. 0. 0.398 C 5 -4.000 3a 0. 0. 0.472 C 6 -4.000 3a 0. 0. 0.546 C 7 -4.000 3a 0. 0. 0.62 C 8 -4.000 3a 0. 0. 0.769 C 9 -4.000 3a 0. 0. 0.917 WYCK a18 REM POL 27R TEST No R value given in the paper. (Code 51) TEST At least one temperature factor missing in the paper. (Code 53) COL ICSD Collection Code 24632 DATE Recorded Jan 1, 1980 NAME Silicon carbide FORM Si C = C Si TITL Developments in Silicon Carbide Research REF Acta Crystallographica (1,1948-23,1967) ACCRA 5 (1952) 215-244 AUT Ramsdell L S, KohnÿJÿA CELL a=3.067 b=3.067 c=127.925 à=90.0 á=90.0 ç=120.0 V=1042.1 Z=51 SGR R 3 m H (160) - trigonal CLAS 3m (Hermann-Mauguin) - C3v (Schoenflies) PRS hR102 ANX AX PARM Atom__No OxStat Wyck ---X--- ---Y--- ---Z--- -SOF- Si 1 4.000 3a 0. 0. 0. Si 2 4.000 3a 0. 0. 0.059 Si 3 4.000 3a 0. 0. 0.137 Si 4 4.000 3a 0. 0. 0.216 Si 5 4.000 3a 0. 0. 0.294 Si 6 4.000 3a 0. 0. 0.373 Si 7 4.000 3a 0. 0. 0.412 Si 8 4.000 3a 0. 0. 0.451 Si 9 4.000 3a 0. 0. 0.49 Si 10 4.000 3a 0. 0. 0.529 Si 11 4.000 3a 0. 0. 0.569 Si 12 4.000 3a 0. 0. 0.608 Si 13 4.000 3a 0. 0. 0.647 Si 14 4.000 3a 0. 0. 0.686 Si 15 4.000 3a 0. 0. 0.765 Si 16 4.000 3a 0. 0. 0.843 Si 17 4.000 3a 0. 0. 0.922 C 1 -4.000 3a 0. 0. 0.015 C 2 -4.000 3a 0. 0. 0.074 C 3 -4.000 3a 0. 0. 0.152 C 4 -4.000 3a 0. 0. 0.23 C 5 -4.000 3a 0. 0. 0.309 C 6 -4.000 3a 0. 0. 0.387 C 7 -4.000 3a 0. 0. 0.426 C 8 -4.000 3a 0. 0. 0.466 C 9 -4.000 3a 0. 0. 0.505 C 10 -4.000 3a 0. 0. 0.544 C 11 -4.000 3a 0. 0. 0.583 C 12 -4.000 3a 0. 0. 0.623 C 13 -4.000 3a 0. 0. 0.662 C 14 -4.000 3a 0. 0. 0.701 C 15 -4.000 3a 0. 0. 0.779 C 16 -4.000 3a 0. 0. 0.858 C 17 -4.000 3a 0. 0. 0.936 WYCK a34 REM POL 51R(b) TEST No R value given in the paper. (Code 51) TEST At least one temperature factor missing in the paper. (Code 53) TEST The lattice paramters are unusual but agree with the paper. (Code 55) COL ICSD Collection Code 24633 DATE Recorded Jan 1, 1980 NAME Silicon carbide FORM Si C = C Si TITL Developments in Silicon Carbide Research REF Acta Crystallographica (1,1948-23,1967) ACCRA 5 (1952) 215-224 AUT Ramsdell L S, KohnÿJÿA CELL a=3.067 b=3.067 c=188.126 à=90.0 á=90.0 ç=120.0 V=1532.5 Z=75 SGR R 3 m H (160) - trigonal CLAS 3m (Hermann-Mauguin) - C3v (Schoenflies) PRS hR150 ANX AX PARM Atom__No OxStat Wyck ---X--- ---Y--- ---Z--- -SOF- Si 1 4.000 3a 0. 0. 0. Si 2 4.000 3a 0. 0. 0.04 Si 3 4.000 3a 0. 0. 0.093 Si 4 4.000 3a 0. 0. 0.12 Si 5 4.000 3a 0. 0. 0.147 Si 6 4.000 3a 0. 0. 0.2 Si 7 4.000 3a 0. 0. 0.253 Si 8 4.000 3a 0. 0. 0.28 Si 9 4.000 3a 0. 0. 0.307 Si 10 4.000 3a 0. 0. 0.36 Si 11 4.000 3a 0. 0. 0.387 Si 12 4.000 3a 0. 0. 0.413 Si 13 4.000 3a 0. 0. 0.467 Si 14 4.000 3a 0. 0. 0.507 Si 15 4.000 3a 0. 0. 0.56 Si 16 4.000 3a 0. 0. 0.6 Si 17 4.000 3a 0. 0. 0.653 Si 18 4.000 3a 0. 0. 0.68 Si 19 4.000 3a 0. 0. 0.733 Si 20 4.000 3a 0. 0. 0.773 Si 21 4.000 3a 0. 0. 0.827 Si 22 4.000 3a 0. 0. 0.853 Si 23 4.000 3a 0. 0. 0.88 Si 24 4.000 3a 0. 0. 0.907 Si 25 4.000 3a 0. 0. 0.96 C 1 -4.000 3a 0. 0. 0.01 C 2 -4.000 3a 0. 0. 0.05 C 3 -4.000 3a 0. 0. 0.103 C 4 -4.000 3a 0. 0. 0.13 C 5 -4.000 3a 0. 0. 0.157 C 6 -4.000 3a 0. 0. 0.21 C 7 -4.000 3a 0. 0. 0.263 C 8 -4.000 3a 0. 0. 0.29 C 9 -4.000 3a 0. 0. 0.317 C 10 -4.000 3a 0. 0. 0.37 C 11 -4.000 3a 0. 0. 0.397 C 12 -4.000 3a 0. 0. 0.423 C 13 -4.000 3a 0. 0. 0.477 C 14 -4.000 3a 0. 0. 0.517 C 15 -4.000 3a 0. 0. 0.57 C 16 -4.000 3a 0. 0. 0.61 C 17 -4.000 3a 0. 0. 0.663 C 18 -4.000 3a 0. 0. 0.69 C 19 -4.000 3a 0. 0. 0.743 C 20 -4.000 3a 0. 0. 0.783 C 21 -4.000 3a 0. 0. 0.837 C 22 -4.000 3a 0. 0. 0.863 C 23 -4.000 3a 0. 0. 0.89 C 24 -4.000 3a 0. 0. 0.917 C 25 -4.000 3a 0. 0. 0.97 WYCK a50 REM POL 75R TEST At least one temperature factor missing in the paper. (Code 53) TEST No R value given in the paper. (Code 51) TEST The lattice paramters are unusual but agree with the paper. (Code 55) COL ICSD Collection Code 24634 DATE Recorded Aug 8, 1986; updated Aug 8, 1986 NAME Silicon carbide FORM Si C = C Si TITL Development in Silicon Carbide Research REF Acta Crystallographica (1,1948-23,1967) ACCRA 5 (1952) 215-224 AUT Ramsdell L S, KohnÿJÿA CELL a=3.067 b=3.067 c=210.695 à=90.0 á=90.0 ç=120.0 V=1716.4 Z=84 SGR R 3 m H (160) - trigonal CLAS 3m (Hermann-Mauguin) - C3v (Schoenflies) PRS hR168 ANX AX PARM Atom__No OxStat Wyck ---X--- ---Y--- ---Z--- -SOF- Si 1 4.000 3a 0. 0. 0. Si 2 4.000 3a 0. 0. 0.036 Si 3 4.000 3a 0. 0. 0.071 Si 4 4.000 3a 0. 0. 0.107 Si 5 4.000 3a 0. 0. 0.143 Si 6 4.000 3a 0. 0. 0.179 Si 7 4.000 3a 0. 0. 0.214 Si 8 4.000 3a 0. 0. 1/4 Si 9 4.000 3a 0. 0. 0.298 Si 10 4.000 3a 0. 0. 0.321 Si 11 4.000 3a 0. 0. 0.345 Si 12 4.000 3a 0. 0. 0.393 Si 13 4.000 3a 0. 0. 0.417 Si 14 4.000 3a 0. 0. 0.464 Si 15 4.000 3a 0. 0. 0.488 Si 16 4.000 3a 0. 0. 0.536 Si 17 4.000 3a 0. 0. 0.56 Si 18 4.000 3a 0. 0. 0.607 Si 19 4.000 3a 0. 0. 0.643 Si 20 4.000 3a 0. 0. 0.69 Si 21 4.000 3a 0. 0. 0.714 Si 22 4.000 3a 0. 0. 0.762 Si 23 4.000 3a 0. 0. 0.786 Si 24 4.000 3a 0. 0. 5/6 Si 25 4.000 3a 0. 0. 0.857 Si 26 4.000 3a 0. 0. 0.905 Si 27 4.000 3a 0. 0. 0.929 Si 28 4.000 3a 0. 0. 0.952 C 1 -4.000 3a 0. 0. 0.009 C 2 -4.000 3a 0. 0. 0.045 C 3 -4.000 3a 0. 0. 0.08 C 4 -4.000 3a 0. 0. 0.116 C 5 -4.000 3a 0. 0. 0.152 C 6 -4.000 3a 0. 0. 0.188 C 7 -4.000 3a 0. 0. 0.223 C 8 -4.000 3a 0. 0. 0.259 C 9 -4.000 3a 0. 0. 0.307 C 10 -4.000 3a 0. 0. 0.33 C 11 -4.000 3a 0. 0. 0.354 C 12 -4.000 3a 0. 0. 0.402 C 13 -4.000 3a 0. 0. 0.426 C 14 -4.000 3a 0. 0. 0.473 C 15 -4.000 3a 0. 0. 0.497 C 16 -4.000 3a 0. 0. 0.545 C 17 -4.000 3a 0. 0. 0.568 C 18 -4.000 3a 0. 0. 0.616 C 19 -4.000 3a 0. 0. 0.652 C 20 -4.000 3a 0. 0. 0.699 C 21 -4.000 3a 0. 0. 0.723 C 22 -4.000 3a 0. 0. 0.771 C 23 -4.000 3a 0. 0. 0.795 C 24 -4.000 3a 0. 0. 0.842 C 25 -4.000 3a 0. 0. 0.866 C 26 -4.000 3a 0. 0. 0.914 C 27 -4.000 3a 0. 0. 0.938 C 28 -4.000 3a 0. 0. 0.961 WYCK a56 REM POL 84R TEST No R value given in the paper. (Code 51) TEST At least one temperature factor missing in the paper. (Code 53) TEST The lattice paramters are unusual but agree with the paper. (Code 55) COL ICSD Collection Code 27051 DATE Recorded Jan 1, 1980 NAME Silicon carbide - beta FORM Si C = C Si TITL The Formation and Crystal Structure of Silicon Carbide REF British Journal of Applied Physics BJAPA 1 (1950) 174-181 AUT Taylor A, LaidlerÿDÿS CELL a=3.082 b=3.082 c=15.118 à=90.0 á=90.0 ç=120.0 V=124.3 D=3.21 Z=6 SGR P 63 m c (186) - hexagonal CLAS 6mm (Hermann-Mauguin) - C6v (Schoenflies) PRS hP12 ANX AX PARM Atom__No OxStat Wyck ---X--- ---Y--- ---Z--- -SOF- C 1 -4.000 2a 0. 0. 0. C 2 -4.000 2a 1/3 2/3 1/6 C 3 -4.000 2a 1/3 2/3 5/6 Si 1 4.000 2a 0. 0. 1/8 Si 2 4.000 2a 1/3 2/3 0.2917 Si 3 4.000 2a 1/3 2/3 0.9583 WYCK a6 REM XDP (X-ray diffraction from a powder) TEST No R value given in the paper. (Code 51) TEST At least one temperature factor missing in the paper. (Code 53) COL ICSD Collection Code 28389 DATE Recorded Jan 1, 1980; updated Nov 30, 1984 NAME Silicon carbide FORM Si C = C Si TITL Silicon carbide Crystals Grown in Nitrogen Atmosphere REF Mineralogical Journal (Japan) MJTOA 4 (1965) 333-355 AUT Kawamura T CELL a=4.358 b=4.358 c=4.358 à=90.0 á=90.0 ç=90.0 V=82.8 Z=4 SGR F 2 3 (196) - cubic CLAS 23 (Hermann-Mauguin) - T (Schoenflies) PRS cF8 ANX AX PARM Atom__No OxStat Wyck ---X--- ---Y--- ---Z--- -SOF- Si 1 4.000 4a 0. 0. 0. C 1 -4.000 4d 3/4 3/4 3/4 WYCK d a REM POL 3C RVAL 0.048 TEST At least one temperature factor missing in the paper. (Code 53) COL ICSD Collection Code 28895 DATE Recorded Jan 1, 1980; updated Dec 18, 1984 NAME Silicon carbide MINR Carborundum - artificial FORM Si C = C Si TITL The Atomic Structure of Carborundum Determined by X-Rays REF Journal of the American Chemical Society JACSA 40 (1918) 1749-1759 AUT Burdick C L, OwenÿEÿA CELL a=4.358 b=4.358 c=4.358 à=90.0 á=90.0 ç=90.0 V=82.8 Z=4 SGR F -4 3 m (216) - cubic CLAS -43m (Hermann-Mauguin) - Td (Schoenflies) PRS cF8 ANX AX PARM Atom__No OxStat Wyck ---X--- ---Y--- ---Z--- -SOF- Si 1 4.000 4a 0. 0. 0. C 1 -4.000 4b 1/4 1/4 1/4 WYCK b a TEST No R value given in the paper. (Code 51) TEST At least one temperature factor missing in the paper. (Code 53) COL ICSD Collection Code 31069 DATE Recorded Jan 1, 1980 NAME Silicon carbide - II. FORM Si C = C Si TITL Die Gitterstruktur des Karborunds ( Si C ) I. REF Zeitschrift fuer Kristallographie, Kristallgeometrie, Kristallphysik, Kristallchemie (-144,1977) ZEKGA 61 (1925) 515-531 AUT Ott H CELL a=3.095 b=3.095 c=15.170 à=90.0 á=90.0 ç=120.0 V=125.8 D=3.12 Z=6 SGR P 63 (173) - hexagonal CLAS 6 (Hermann-Mauguin) - C6 (Schoenflies) PRS hP12 ANX AX PARM Atom__No OxStat Wyck ---X--- ---Y--- ---Z--- -SOF- C 1 -4.000 2a 0. 0. 0. C 2 -4.000 2b 1/3 2/3 1/6 C 3 -4.000 2b 1/3 2/3 5/6 Si 1 4.000 2a 0. 0. 1/8 Si 2 4.000 2b 1/3 2/3 0.2917 Si 3 4.000 2b 1/3 2/3 0.9583 WYCK b4 a2 TEST No R value given in the paper. (Code 51) TEST At least one temperature factor missing in the paper. (Code 53) TEST Calculated density unusual but tolerable. (Code 23) COL ICSD Collection Code 39855 DATE Recorded Oct 17, 1995 NAME Silicon carbide (5/3) - gamma FORM Si5 C3 = C3 Si5 TITL State and crystal structure of the products of interaction between Si C and Si O2 REF Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy IVNMA 31 (1995) 327-332 AUT Khaenko B V, PrilutskiiÿEÿV, MikhailikÿAÿA, KarpetsÿMÿV, KrainikovÿAÿV CELL a=4.523 b=4.523 c=4.523 à=90.0 á=90.0 ç=90.0 V=92.5 Z=1 SGR P 21 3 (198) - cubic CLAS 23 (Hermann-Mauguin) - T (Schoenflies) PRS cP8 ANX NO PARM Atom__No OxStat Wyck ---X--- ---Y--- ---Z--- -SOF- Si 1 0.000 4a 0.149 0.149 0.149 Si 2 0.000 4a 0.851 0.851 0.851 0.26 C 1 0.000 4a 0.851 0.851 0.851 0.74 WYCK a2 ITF Si 1 B=0.26 ITF Si 2 B=0.1 ITF C 1 B=0.1 RVAL 0.045 TEST At least one temperature factor is implausible or meaningless but agrees with the value given in the paper. (Code 52)